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Development Status and Trend of Deepwater Oil and Gas Drilling Technologies and Equipment
XIE Yuhong, LIU Shujie, YANG Jin, WANG Yanbin, YIN Qishuai, YANG Yuxiang
Abstract560)   HTML60)    PDF (26206KB)(542)      

The fierce competition among countries in the field of marine resource exploitation is, in the final analysis, the competition of technologies and core equipment supporting national rights and interests. With the in-depth practice of China’s marine power strategy and the Belt and Road Initiative, offshore oil and gas drilling is making great strides toward the far-reaching sea, and deepwater oil and gas drilling technologies and equipment have become important cornerstones to ensure China’s energy security. How to solve the bottleneck problem, realize the localization of key core equipment, and create the source of original drilling technologies are the new problems in deepwater oil and gas drilling. In this paper, deepwater oil and gas drilling technologies and equipment are briefly introduced, and the status of deepwater oil and gas drilling technologies and equipment in China and abroad are comprehensively analyzed. The future development trend of the key technology and key equipment of deepwater oil and gas drilling is predicted.

2023, 2 (2): 22-31.   doi: 10.3981/j.issn.2097-0781.2023.02.002
Evolution of Advanced CMOS Technology and Suggestions for Its Development in China
ZHANG Wei, XU Min, CHEN Kun, LIU Tao, YANG Jingwen, SUN Xin, HUANG Ziqiang, WANG Dawei, WU Chunlei, WANG Chen, XU Saisheng
Abstract912)   HTML54)    PDF (4061KB)(1381)      

The rapid development of information society has greatly promoted the demand for high-performance computing (HPC), and advanced complementary metal oxide semi-conductor (CMOS) technology ensures the manufacturing of HPC chips. As a result, the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world. This paper reviews the necessity of a Fin field-effect transistor (FinFET) evolving into a gate-all-around field-effect transistor (GAAFET) and analyzes challenges in technological modules, system integration, and non-destructive technological characterization. It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design, and design technology co-optimization (DTCO) will become increasingly important. In addition, the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.

2022, 1 (3): 52-60.   doi: 10.3981/j.issn.2097-0781.2022.03.004