Evolution of Advanced CMOS Technology and Suggestions for Its Development in China

doi:10.3981/j.issn.2097-0781.2022.03.004

Science and Technology Foresight ›› 2022, Vol. 1 ›› Issue (3): 52-60.DOI: 10.3981/j.issn.2097-0781.2022.03.004

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Evolution of Advanced CMOS Technology and Suggestions for Its Development in China

ZHANG Wei¹^,²(), XU Min¹^,², CHEN Kun¹^,², LIU Tao¹, YANG Jingwen¹, SUN Xin¹, HUANG Ziqiang¹, WANG Dawei¹, WU Chunlei¹^,², WANG Chen¹^,², XU Saisheng¹

1. School of Microelectronics, Fudan University, Shanghai 200433, China
2. Shanghai Integrated Circuit Manufacturing Innovation Center Co. Ltd., Shanghai 200120, China

Received:2022-07-30 Revised:2022-08-24 Online:2022-09-20 Published:2022-11-04

先进CMOS制造工艺的技术演进及自主发展思考

张卫¹^,²(), 徐敏¹^,², 陈鲲¹^,², 刘桃¹, 杨静雯¹, 孙新¹, 黄自强¹, 汪大伟¹, 吴春蕾¹^,², 王晨¹^,², 徐赛生¹

1.复旦大学微电子学院,上海 200433
2.上海集成电路制造创新中心有限公司,上海 200120

作者简介:张卫,教授,博士研究生导师。现任复旦大学微电子学院院长,复旦大学校学术委员会副主任,复旦大学校务委员会委员,上海证券交易所科创板专家咨询委员会委员。国务院政府特殊津贴获得者。长期从事集成电路工艺、半导体新器件和半导体材料的研究,并取得了很多创新性成果。牵头编写了我国第一部《中国集成电路技术发展路线图》,主导了多个国家级集成电路重大科技创新平台的建设工作。在Science、Nature Nanotechnology、IEEE Electron Device Letters、IEEE Transactions on Electron Devices等顶尖期刊及学术会议上发表论文300余篇。获授权发明专利94项。电子信箱： dwzhang@fudan.edu.cn。

Abstract

Abstract:

The rapid development of information society has greatly promoted the demand for high-performance computing (HPC), and advanced complementary metal oxide semi-conductor (CMOS) technology ensures the manufacturing of HPC chips. As a result, the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world. This paper reviews the necessity of a Fin field-effect transistor (FinFET) evolving into a gate-all-around field-effect transistor (GAAFET) and analyzes challenges in technological modules, system integration, and non-destructive technological characterization. It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design, and design technology co-optimization (DTCO) will become increasingly important. In addition, the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.

Key words: nanosheet, gate-all-around, parasitic channel, parasitic resistance/capacitance, channel stress, design technology co-optimization, non-destructive characterization

摘要：

信息社会的迅猛发展极大推动了对高性能计算的需求。而先进互补金属氧化物半导体（CMOS）制造工艺是制造高性能计算芯片的保障,因此成为世界顶尖设计公司和芯片制造企业竞争的技术高地。文章概述了鳍式场效应晶体管（FinFET）之后技术演进到环栅场效应晶体管（GAAFET）的必然性,以及在工艺模块、系统集成和工艺无损表征上带来的挑战。在先进CMOS制造工艺技术的创新上,需要有从器件开发到系统设计的思维转变;设计工艺协同优化（DTCO）将会发挥越来越重要的作用。面向未来国产先进的CMOS制造工艺的发展,在技术开发和人才培养方面提出了发展建议和举措。

关键词: 纳米片, 环栅, 寄生沟道, 寄生电阻/电容, 沟道应力, 设计工艺协同优化, 无损表征

ZHANG Wei, XU Min, CHEN Kun, LIU Tao, YANG Jingwen, SUN Xin, HUANG Ziqiang, WANG Dawei, WU Chunlei, WANG Chen, XU Saisheng. Evolution of Advanced CMOS Technology and Suggestions for Its Development in China[J]. Science and Technology Foresight, 2022, 1(3): 52-60.

张卫, 徐敏, 陈鲲, 刘桃, 杨静雯, 孙新, 黄自强, 汪大伟, 吴春蕾, 王晨, 徐赛生. 先进CMOS制造工艺的技术演进及自主发展思考[J]. 前瞻科技, 2022, 1(3): 52-60.

Figures/Tables 11

References 20

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Evolution of Advanced CMOS Technology and Suggestions for Its Development in China

先进CMOS制造工艺的技术演进及自主发展思考

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