The rapid development of information society has greatly promoted the demand for high-performance computing (HPC), and advanced complementary metal oxide semi-conductor (CMOS) technology ensures the manufacturing of HPC chips. As a result, the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world. This paper reviews the necessity of a Fin field-effect transistor (FinFET) evolving into a gate-all-around field-effect transistor (GAAFET) and analyzes challenges in technological modules, system integration, and non-destructive technological characterization. It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design, and design technology co-optimization (DTCO) will become increasingly important. In addition, the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.