Pipelines are the ‘blood vessels’ of chemical production, often operating under conditions of high temperature, high pressure (differential), and high flow rates. These conditions include gas-liquid phase changes with local three-phase (gas-liquid-solid) flow, as well as environments characterized by the presence of hydrogen, high chlorine, high sulfur, and high acidity, which are highly corrosive. The diversity of the physical and chemical properties of the transported media, the harshness of the service environments, and the complexity of the damage and failure mechanisms pose greater demands on chemical pipeline transportation. This article mainly reviews the progress of chemical pipeline transportation technology both domestically and internationally. By integrating high-temperature and high-pressure process parameters, as well as the characteristics of corrosive, hydrogen-prone, and solid-containing multiphase media, it analyzes the technical challenges brought to chemical pipeline transportation by different types of media. From the perspective of pipeline design theory, material and monitoring technology research and development, intelligent pipeline operation and maintenance, and the construction of pipeline standards and specifications in harsh and complex environments, the article proposes key directions for the development of chemical pipeline transportation. The aim is to enhance the level of chemical pipeline transportation and meet the demands of chemical pipeline transportation under new circumstances.

The rapid development of information society has greatly promoted the demand for high-performance computing (HPC), and advanced complementary metal oxide semi-conductor (CMOS) technology ensures the manufacturing of HPC chips. As a result, the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world. This paper reviews the necessity of a Fin field-effect transistor (FinFET) evolving into a gate-all-around field-effect transistor (GAAFET) and analyzes challenges in technological modules, system integration, and non-destructive technological characterization. It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design, and design technology co-optimization (DTCO) will become increasingly important. In addition, the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.