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Lithium Niobate Crystals, Single-crystal Thin Films, and Their Applications in Photonic Chips and Quantum Optical Devices
CHEN Kunfeng, TANG Gongbin, HU Hui, QIAO Wei, WANG Ya’nan, XUE Dongfeng
Abstract134)   HTML5)    PDF (2216KB)(110)      

With the rapid development of application fields such as 5G/6G communication technologies, big data, and artificial intelligence, there is an increasingly urgent demand for new-generation photonic chips. Lithium niobate crystals, due to their excellent electro-optic, nonlinear optical, and piezoelectric properties, have become the core material of the new-generation integrated photonic chips and are known as the “optical silicon”. With the breakthroughs in the preparation and device processing technologies of lithium niobate single-crystal thin films, the single-crystal thin films have demonstrated unique advantages in their applications in high-speed electro-optic modulators, integrated optics, and quantum optics, including smaller size, higher integration, ultrafast electro-optic effect, wide bandwidth, and low power consumption. This paper introduced the research and development progress in the preparation technologies of optical-grade lithium niobate crystals and single-crystal thin films in China and abroad, as well as relevant science and technology policies and their latest applications in fields such as photonic chips, integrated optical platforms, and quantum optical devices. It analyzed the development trends and challenges of the industrial chain of lithium niobate crystals, thin films, and devices and put forward suggestions for the development and future layout of the lithium niobate industry. In China, the research on lithium niobate single-crystal thin films and advanced devices is almost on a par with the international advanced level. However, there is still a large gap in the industrialization of high-quality lithium niobate crystal materials compared with other countries. By optimizing the industrial layout and strengthening basic research and development, China will form a lithium niobate industry cluster covering material preparation, device design, manufacturing, and application in the future.

2025, 4 (1): 49-57.   doi: 10.3981/j.issn.2097-0781.2025.01.005
Evolution of Advanced CMOS Technology and Suggestions for Its Development in China
ZHANG Wei, XU Min, CHEN Kun, LIU Tao, YANG Jingwen, SUN Xin, HUANG Ziqiang, WANG Dawei, WU Chunlei, WANG Chen, XU Saisheng
Abstract912)   HTML54)    PDF (4061KB)(1381)      

The rapid development of information society has greatly promoted the demand for high-performance computing (HPC), and advanced complementary metal oxide semi-conductor (CMOS) technology ensures the manufacturing of HPC chips. As a result, the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world. This paper reviews the necessity of a Fin field-effect transistor (FinFET) evolving into a gate-all-around field-effect transistor (GAAFET) and analyzes challenges in technological modules, system integration, and non-destructive technological characterization. It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design, and design technology co-optimization (DTCO) will become increasingly important. In addition, the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.

2022, 1 (3): 52-60.   doi: 10.3981/j.issn.2097-0781.2022.03.004