| [1] |
Yamada H, Chayahara A, Mokuno Y, et al. A 2-in. mosaic wafer made of a single-crystal diamond[J]. Applied Physics Letters, 2014, 104(10): 102110, doi:10.1063/1.4868720.
|
| [2] |
Schreck M, Gsell S, Brescia R, et al. Ion bombardment induced buried lateral growth: The key mechanism for the synthesis of single crystal diamond wafers[J]. Scientific Reports, 2017, 7: 44462, doi:10.1038/srep44462.
PMID
|
| [3] |
西安交通大学科研团队成功实现(111)面异质外延单晶金刚石衬底的制备[EB/OL]. (2024-11-20). https://news.xjtu.edu.cn/info/1004/216193.htm.
|
|
A research team from Xi’an Jiaotong University has successfully prepared a (111) surface heteroepitaxial single crystal diamond substrate[EB/OL]. (2024-11-20). https://news.xjtu.edu.cn/info/1004/216193.htm. (in Chinese)
|
| [4] |
Qu P F, Jin P, Zhou G D, et al. Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates[J]. Journal of Semiconductors, 2024, 45(9): 090501, doi: 10.1088/1674-4926/24060003.
|
| [5] |
Jing J X, Sun F Q, Wang Z Q, et al. Scalable production of ultraflat and ultraflexible diamond membrane[J]. Nature, 2024, 636(8043): 627-634.
|
| [6] |
Yuan Y, Hao W B, Mu W X, et al. Toward emerging gallium oxide semiconductors: A roadmap[J]. Fundamental Research, 2021, 1(6): 697-716.
|
| [7] |
镓仁半导体晶圆级(010)氧化镓单晶衬底直径突破3英寸[EB/OL]. (2024-07-16). http://silab.zju.edu.cn/2024/0716/c15276a2946325/page.htm.
|
|
(010) gallium oxide single crystal substrate diameter exceeds 3 inches[EB/OL]. (2024-07-16). http://silab.zju.edu.cn/2024/0716/c15276a2946325/page.htm. (in Chinese)
|
| [8] |
实验室孵化企业实现氧化镓晶体生长技术重大突破[EB/OL]. (2024-11-11). http://silab.zju.edu.cn/2024/1111/c15276a2986500/page.htm.
|
|
Laboratory incubated enterprises achieve significant breakthroughs in gallium oxide crystal growth technology[EB/OL]. (2024-11-11). http://silab.zju.edu.cn/2024/1111/c15276a2986500/page.htm. (in Chinese)
|
| [9] |
Zhang J, Liu N, Chen L, et al. Ultrawide bandgap diamond/ε-Ga2O3 heterojunction pn diodes with breakdown voltages over 3 kV[J]. Nano Letters, 2025, 25(1): 537-544.
|
| [10] |
Crystal IS and Asahi Kasei have achieved 99% usable area on 100 mm bulk aluminum nitride substrate[EB/OL]. (2024-06-12). https://www.cisuvc.com/crystal-is-improves-100mm-substrate/.
|
