Abstract:

Integrated circuit (IC) chips play a more and more important role in everyday life and the national economy, and the capability of manufacturing chips is a key indicator of a nation’s technology status. Due to the Wassenaar Arrangement, China cannot import the extreme ultraviolet (EUV) lithography technique, and thus ArF immersion lithography with the multi-patterning process is essential to the development of ICs, which poses higher requirements for lithographic materials used in the multi-patterning process. In this paper, we summarize the paths of the multi-patterning process and lithographic materials involved upon the review of the development of lithography technology. Moreover, we analyze the technical development of and challenges faced by advanced lithographic materials such as ArF immersion photoresists, pattern shrink materials, and trilayer materials (spin-on glass and spin-on carbon). The review and outlook of the technical evolution indicate that the passive equipment-driven development mode of lithographic materials has transformed into the coordinated development mode of material innovation and equipment processes. In particular, with limited equipment, China should take the innovation of materials as the driver to develop an IC path with Chinese characteristics.

Key words: multi-patterning process, ArF immersion lithography, chemical shrink materials, spin-on glass, spin-on carbon

摘要：

集成电路芯片在社会生活及国民经济的发展中起着越来越重要的作用,同时芯片制造能力成为衡量一个国家科技水平的重要因素。受瓦森纳协定限制,中国无法引进极紫外（EUV）光刻技术,因此氟化氩（ArF）浸没式光刻与多重图形技术成为集成电路技术发展的关键,这也给多重图形技术中用的光刻材料提出了更高的要求。文章在回顾光刻技术发展的基础上,总结了多重图形技术的不同路线及其涉及的光刻材料,针对ArF浸没式光刻胶、图形收缩材料及三层工艺用旋涂碳材料、旋涂硅材料等先进光刻材料的技术发展与挑战进行分析。通过对技术发展的回顾与展望可以看出,光刻材料的开发已由原先设备推动的被动模式转变为材料创新与设备工艺协同发展的模式,特别是在中国设备受限的大环境下,更需要以材料的创新为驱动力,走出有中国特色的集成电路工艺路线。

关键词: 多重图形技术, 氟化氩浸没式, 化学收缩材料, 旋涂硅材料, 旋涂碳材料