The rapid development of 5G communication, artificial intelligence, Internet of Things, and other fields has put forward demanding requirements for existing communication systems. At present, optical interconnection with low latency, low power consumption, and large capacity is receiving widespread attention as a new communication solution, among which optical interconnection based on silicon-based photoelectrons is one of the best technologies. As the core device, silicon-based germanium photodetector is crucial for the development of silicon-based optical interconnection. This article analyzed the technological development of silicon-based germanium photodetectors, systematically summarized the new structure, key processes, and technological innovations in the development of high-performance silicon-based germanium detectors, and predicted the development trend, hot technologies, and research directions, with a view to providing support for the construction and development of China’s optical communication systems.