超宽禁带半导体材料发展现状与展望

doi:10.3981/j.issn.2097-0781.2025.01.003

前瞻科技 ›› 2025, Vol. 4 ›› Issue (1): 28-35.DOI: 10.3981/j.issn.2097-0781.2025.01.003

超宽禁带半导体材料发展现状与展望

赵璐冰(), 吴玲

第三代半导体产业技术创新战略联盟，北京 100083

收稿日期:2024-12-23 修回日期:2025-02-20 出版日期:2025-03-20 发布日期:2025-03-27
作者简介:赵璐冰，副研究员。第三代半导体产业技术创新战略联盟副秘书长。主要从事第三代半导体产业技术、国家科技规划编制、新型研发机构组建、产学研协同创新、科技成果孵化转化等。电子信箱：zhaolb@china-led.net。

Development Status and Prospects of Ultra-wide Bandgap Semiconductor Materials

ZHAO Lubing(), WU Ling

China Advanced Semiconductor Industry Innovation Alliance, Beijing 100083, China

Received:2024-12-23 Revised:2025-02-20 Online:2025-03-20 Published:2025-03-27

摘要/Abstract

摘要：

文章分析了以金刚石、氧化镓、氮化铝等为代表的超宽禁带半导体材料的主要特点及战略需求，系统梳理了国内外超宽禁带半导体材料的主要技术和产业进展，提出了当前待突破的关键技术问题和发展建议，以期为后续中国超宽禁带半导体材料的发展提供参考。

关键词: 金刚石, 氧化镓, 氮化铝, 超宽禁带半导体

Abstract:

This paper analyzed the main characteristics and strategic requirements of ultra-wide bandgap semiconductor materials represented by diamond, gallium oxide, aluminum nitride, etc. and systematically reviewed the main technologies and industrial developments of ultra-wide bandgap semiconductor materials in China and abroad. It proposed key technical issues that need to be overcome and development suggestions and provided references for the future development of ultra-wide bandgap semiconductor materials in China.

Key words: diamond, gallium oxide, aluminum nitride, ultra-wide bandgap semiconductor

赵璐冰, 吴玲. 超宽禁带半导体材料发展现状与展望[J]. 前瞻科技, 2025, 4(1): 28-35.

ZHAO Lubing, WU Ling. Development Status and Prospects of Ultra-wide Bandgap Semiconductor Materials[J]. Science and Technology Foresight, 2025, 4(1): 28-35.

参考文献 10

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[8]	实验室孵化企业实现氧化镓晶体生长技术重大突破[EB/OL]. (2024-11-11). http://silab.zju.edu.cn/2024/1111/c15276a2986500/page.htm.
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超宽禁带半导体材料发展现状与展望

Development Status and Prospects of Ultra-wide Bandgap Semiconductor Materials

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