二维原子晶体异质结量子器件研究进展及发展建议

doi:10.3981/j.issn.2097-0781.2025.01.004

前瞻科技 ›› 2025, Vol. 4 ›› Issue (1): 36-48.DOI: 10.3981/j.issn.2097-0781.2025.01.004

二维原子晶体异质结量子器件研究进展及发展建议

李小茜¹^,²^,³^,^†(), 韩拯¹^,²^,³

1.山西大学光电研究所，光量子技术与器件全国重点实验室，太原 030006
2.山西大学极端光学协同创新中心，太原 030006
3.辽宁材料实验室，沈阳 110167

收稿日期:2025-01-10 修回日期:2025-02-18 出版日期:2025-03-20 发布日期:2025-03-27
通讯作者: 李小茜
作者简介:李小茜，山西大学光电研究所特聘副教授，辽宁材料实验室兼聘研究员。主要从事新型二维纳米人工复合体系研究。在Science、Nature Communications等期刊发表多篇论文。电子信箱：xiaoxili1987@sxu.edu.cn。
基金资助:
国家自然科学基金(12450003);国家自然科学基金(62375160);国家自然科学基金(92265203)

Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures

LI Xiaoxi¹^,²^,³^,^†(), HAN Zheng Vitto¹^,²^,³

1. State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
3. Liaoning Academy of Materials, Shenyang 110167, China

Received:2025-01-10 Revised:2025-02-18 Online:2025-03-20 Published:2025-03-27
Contact: LI Xiaoxi

摘要/Abstract

摘要：

概述了全球在二维原子晶体异质结材料和器件领域，纳米电子技术和量子技术的应用探索。系统介绍了该领域近期的主要实验成果和科学进展，分析当前二维原子晶体量子器件面临的挑战，对未来的量子计算用材料或电路支撑及量子精密测量的发展提出建议。最后展望了二维原子晶体异质结量子器件的发展趋势，以期为后续研究提供参考。

关键词: 二维原子晶体, 二维异质结, 微纳电子学, 量子器件

Abstract:

Focusing on two-dimensional atomic crystal heterostructures and devices, this paper first provids a brief analysis of the emerging applications of nanotechnology and quantum technology of various countries in this field. It then systematically introduces the major experimental results and scientific progress in this field, analyzes the challenges faced by current two-dimensional atomic crystal quantum devices, and offers recommendations for the development of materials and circuits for future quantum computing and quantum precision measurement. Finally, the paper draws conclusions and predicted the future trend of current quantum devices based on two-dimensional atomic crystal heterostructures, providing a reference for subsequent research on quantum devices based on two-dimensional atomic crystal heterostructures.

Key words: two-dimensional atomic crystal, two-dimensional heterostructure, micro- and nano-electronics, quantum device

李小茜, 韩拯. 二维原子晶体异质结量子器件研究进展及发展建议[J]. 前瞻科技, 2025, 4(1): 36-48.

LI Xiaoxi, HAN Zheng Vitto. Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures[J]. Science and Technology Foresight, 2025, 4(1): 36-48.

图/表 8

图1 直接转移金属电极接触二维电子器件的方法

Fig. 1 Method for direct transfer of metal electrodes onto two-dimensional electronic devices

图2 量子化导电边界态在量子信息处理应用设想 SC：Superconductivity，超导；TSC：Topological Superconductivity，拓扑超导；σ为编织算子；B为磁场。

Fig. 2 Concept of applying quantized conducting edge states in quantum information processing

图3 转角碲化钼体系中的分数量子化的量子反常霍尔效应 T为温度；D为垂直电位移场；v为摩尔填充因子；ρxx为霍尔电阻。

Fig. 3 Fractional quantization of quantum anomalous Hall effect in twisted molybdenum ditelluride systems

图4 少层黑磷/氮化硼异质结器件中的整数量子霍尔效应 Rxx、Rxy分别为横向电阻和霍尔电阻；nH为面载流子浓度。

Fig. 4 Integer quantum Hall effect in few-layer black phosphorus/boron nitride heterostructure devices

图5 单层硒化钨中的里德堡莫尔激子 n为载流子浓度；ns，为满填充载流子浓度；|Eshift|为能量位移幅度；nAA、nAB/BA分别为AA （AB/BA）位置的载流子浓度。

Fig. 5 Rydberg moiré excitons in monolayer tungsten selenide

图6 二维原子晶体异质结作为量子传感器应用示例 PL：Photoluminescence，光致发光；MW：Microwave，微波；MEMS：微机电系统Microelectromechanical System；SU-8：Styrene-based Ultraviolet Curable Epox，一种光刻胶。

Fig. 6 Application of two-dimensional atomic crystal heterostructures as quantum sensor

图7 硫化钼二维原子晶体半导体量子点 VLB、VRB、VDM分别为不同区域位置的底栅电压；VSD、ISD分别为源漏电压和源漏电流；f为分数峰劈裂，f=2δS/δP；δS为测量得到的顶点间的对焦劈裂；δP为顶点对之间的距离；D、S分别为源极和漏极。

Fig. 7 Semiconductor quantum dots of two-dimensional atomic crystal of molybdenum disulfide

图8 界面电荷序导致的石墨烯能带重构

Fig. 8 Graphene band reconstruction induced by interface charge order

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二维原子晶体异质结量子器件研究进展及发展建议

Research Progress and Development Recommendations on Quantum Devices Based on Two-Dimensional Atomic Crystal Heterostructures

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