硅基锗光电探测器的发展现状与未来趋势

doi:10.3981/j.issn.2097-0781.2024.03.005

前瞻科技 ›› 2024, Vol. 3 ›› Issue (3): 61-74.DOI: 10.3981/j.issn.2097-0781.2024.03.005

硅基锗光电探测器的发展现状与未来趋势

李玲(), 闫亭伟, 张宇峰^†()

哈尔滨工业大学航天学院，哈尔滨 150001

收稿日期:2024-06-14 修回日期:2024-07-01 出版日期:2024-09-20 发布日期:2024-09-18
通讯作者: †
作者简介:李玲，教授，博士研究生导师。黑龙江省自然科学基金优秀青年项目获得者。主要从事微纳器件与系统的基础研究。电气与电子工程师协会（IEEE）哈尔滨电子器件分会秘书、高级会员，中国微米纳米学会传感器技术分会理事。主持多个省部级科研项目。电子信箱：linglimems@hit.edu.cn。
张宇峰，教授，博士研究生导师。哈尔滨工业大学航天学院微电子科学与技术系主任。中国微米纳米学会副监事长，中国微米纳米学会微纳传感技术分会副理事长，中国微米纳米学会特种微纳器件与系统分会理事。科技部重点研发计划评审专家。《传感技术学报》和《微处理机》编委。主要从事集成电路芯片设计与集成微系统技术研究。主持20余项省部级科研项目。获省部级奖励二等奖2项，国家专业协会一等奖1项，省部级教学成果奖一等奖1项。出版教材和专著4部，发表论文110余篇，授权发明专利40余件。电子信箱：yufeng_zhang@hit.edu.cn。
基金资助:
黑龙江省自然科学基金(YQ2021F012)

Current Status and Future Trends of Silicon-based Germanium Photodetectors

LI Ling(), YAN Tingwei, ZHANG Yufeng^†()

School of Astronautics, Harbin Institute of Technology, Harbin 150001, China

Received:2024-06-14 Revised:2024-07-01 Online:2024-09-20 Published:2024-09-18
Contact: †

摘要/Abstract

摘要：

5G通信、人工智能、物联网等领域的快速发展对现有的通信系统提出了苛刻的要求。目前，具有低延时、低功耗、大容量等特点的光互连作为新通信方案受到广泛关注，其中基于硅基光电子技术的光互连是最佳的技术选择之一。作为核心器件的硅基锗光电探测器对于硅基光互连的发展至关重要。文章对硅基锗光电探测器技术发展进行阐述分析，系统总结高性能硅基锗光电探测器的新型结构、关键工艺和发展过程中的技术创新，展望其发展趋势和热点技术与研究方向，以期为中国光通信系统建设和发展提供支持。

关键词: 光通信系统, 光互连技术, 硅基光子学, 硅基光电探测器, 硅基锗光电探测器

Abstract:

The rapid development of 5G communication, artificial intelligence, Internet of Things, and other fields has put forward demanding requirements for existing communication systems. At present, optical interconnection with low latency, low power consumption, and large capacity is receiving widespread attention as a new communication solution, among which optical interconnection based on silicon-based photoelectrons is one of the best technologies. As the core device, silicon-based germanium photodetector is crucial for the development of silicon-based optical interconnection. This article analyzed the technological development of silicon-based germanium photodetectors, systematically summarized the new structure, key processes, and technological innovations in the development of high-performance silicon-based germanium detectors, and predicted the development trend, hot technologies, and research directions, with a view to providing support for the construction and development of China’s optical communication systems.

Key words: optical communication systems, optical interconnection technology, silicon-based photonics, silicon-based photodetectors, silicon-based germanium photodetector

李玲, 闫亭伟, 张宇峰. 硅基锗光电探测器的发展现状与未来趋势[J]. 前瞻科技, 2024, 3(3): 61-74.

LI Ling, YAN Tingwei, ZHANG Yufeng. Current Status and Future Trends of Silicon-based Germanium Photodetectors[J]. Science and Technology Foresight, 2024, 3(3): 61-74.

图/表 7

图1 垂直PIN硅基锗光电探测器工艺流程

Fig. 1 Process flow of vertical PIN silicon-based germanium photodetector BOX：Buried Oxide。

图2 光电探测器的三维示意图和吸收光谱

Fig. 2 3D map and absorption spectrum of photodetector

图3 光学超表面增强型硅基锗光电探测器

Fig. 3 Optical metasurface enhanced-silicon-based germanium photodetector

表1 典型面入射硅基锗光电探测器总结

Table 1 Typical surface incident silicon-based germanium photodetectors

锗尺寸	波长/nm	量子效率/%	3 dB带宽/GHz	暗电流浓度/(mA·cm^-2)	文献
D=10 μm H=300 nm	1 552	2.8	38.9	—	[23]
D=12 μm	1 550	—	48.0	3.4	[31]
H=960 nm	1 590	—	—	—	[32]
H=600 nm	1 550	—	58.0	—	[33]
H=280 nm	1 550	70.0	66.0	—	[34]
H=2 000nm	1 550	73.0	—	50.0	[37]
H=350 nm	1 550	50.0	33.0	58.0	[38]

图4 高响应度的锗光电探测器

Fig. 4 Germanium photodetector with high responsiveness

图5 高响应度的锗光电探测器

Fig. 5 Germanium photodetector with high responsiveness

表2 典型硅基锗波导光电探测器总结

Table 2 Typical silicon-based germanium waveguide photodetectors

锗尺寸	波长/nm	响应度/(A·W^-1)	3 dB 带宽/GHz	暗电流密度/nA	文献
H=400 nm	1 550	0.89	80.0	6.4	[27]
H=340 nm	1 550	1.00	42.0	—	[21]
D=3 μm	1 580	0.78	67.0	6.4	[41]
D=8 μm	1 550	1.09	42.5	3 500.0	[43]
H=350 nm	1 550	1.44	40.0	1 000.0	[45]
H=800 nm	1 550	0.89	31.3	169.0	[46]
H=260 nm	1 550	0.80	—	150.0	[47]
H=400 nm	1 550	0.30	265.0	100.0~200.0	[50]

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硅基锗光电探测器的发展现状与未来趋势

Current Status and Future Trends of Silicon-based Germanium Photodetectors

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